Internal Photoemission Measurements for the Determination of Schottky Barrier Height on a-Si, Ge:H, F Alloys
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Characterization of junctions between transparent electrodes and a-Si:HJournal of Non-Crystalline Solids, 1985
- Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge DepositionMRS Proceedings, 1985
- Oxidation of glow discharge a-Si:HSolid-State Electronics, 1982
- Internal photoemission in hydrogenated amorphous-Si filmsApplied Physics Letters, 1980
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931