Observation of a Bloch-Grüneisen regime in two-dimensional electron transport
- 15 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (2) , 1278-1281
- https://doi.org/10.1103/physrevb.41.1278
Abstract
We have observed a rapid decrease in the rate by which two-dimensional electrons in very high-mobility (μ≊ /V sec) GaAs- As heterostructures are scattered by acoustic phonons as the temperature approaches T=0. This precipitous drop in scattering rate is caused by strong phase-space restrictions for electron-phonon scattering. The characteristic temperature for this transition is not the Debye temperature of the GaAs host material, but the temperature at which phonons of twice the Fermi wave vector cease to be thermally excited.
Keywords
This publication has 22 references indexed in Scilit:
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989
- Mobility of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructuresApplied Physics Letters, 1984
- Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensionsPhysical Review B, 1983
- Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphineApplied Physics Letters, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlatticeSurface Science, 1980
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Zum elektrischen Widerstandsgesetz bei tiefen TemperaturenThe European Physical Journal A, 1930