Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular-beam epitaxy

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Abstract
Radiation damage and its recovery process of molecular‐beam epitaxy grown AlSb implanted with Ga ions is studied using Raman scattering for Ga ion fluences ranging from 1×1013 to 5×1014 cm−2 and for annealing temperatures ranging from 300 to 600 °C. With increasing fluences the AlSb longitudinal optical (LO) phonon mode shifts to lower frequency and exhibits an asymmetric broadening. Recovery of radiation damages in the ion implanted AlSb is observed after annealing at as low as 300 °C. On the other hand, after annealing at above 500 °C, disordering of the crystalline structure due to the outdiffusion of Sb is observed. The damage states and the recovering behaviors are quantitatively estimated using the spatial correlation model on the LO mode.