Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2119
- https://doi.org/10.1143/jjap.28.l2119
Abstract
A high-electrical-resistance region as high as 1×104 Ω·cm can be formed in Si-doped InP (n=1×1018 cm-3) layers by 8×1014 cm-2 Ga focused ion beam (FIB) implantation and 500–600°C annealing. The clear photoresponse is also observed in the Ga-FIB-implanted diode structures after annealing. A drastic carrier concentration decrease and the existence of residual defects are confirmed by Raman scattering measurement.Keywords
This publication has 6 references indexed in Scilit:
- Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scatteringJournal of Applied Physics, 1989
- Intermixing of InGaAs/InP multiple quantum well structures by Ga implantationApplied Physics Letters, 1989
- GaAs/AlGaAs material modifications induced by focused Ga ion beam implantationJournal of Vacuum Science & Technology B, 1988
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam ImplantationJapanese Journal of Applied Physics, 1986
- Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam ImplantationJapanese Journal of Applied Physics, 1985