Nanometer scale pattern replication using electron beam direct patterned SiO2 as the etching mask
- 9 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (24) , 3157-3158
- https://doi.org/10.1063/1.105770
Abstract
Because of its unique properties and well‐established processing techniques, SiO2 has wide application in the integrated circuit industry. The ability to directly pattern SiO2 with nanometer resolution by electron beam irradiation is therefore of great importance in the fabrication of both ultrasmall conventional and quantum devices. In this letter we demonstrate the replication of trenches with feature sizes as small as 10 nm into polycrystalline silicon and single‐crystal and via reactive ion etching by using electron beam direct patterned SiO2 as the mask.Keywords
This publication has 5 references indexed in Scilit:
- Direct nanometer scale patterning of SiO2 with electron beam irradiation through a sacrificial layerApplied Physics Letters, 1990
- Radiolysis and resolution limits of inorganic halide resistsJournal of Vacuum Science & Technology B, 1985
- Fabrication of apertures, slots, and grooves at the 8–80 nm scale in silicon and metal filmsJournal of Vacuum Science & Technology B, 1983
- 10-nm linewidth electron beam lithography on GaAsApplied Physics Letters, 1983
- 250-Å linewidths with PMMA electron resistApplied Physics Letters, 1978