Circuits for High-Efficiency Avalanche-Diode Oscillators
- 1 December 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 17 (12) , 1060-1067
- https://doi.org/10.1109/tmtt.1969.1127101
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- AVALANCHE SHOCK FRONTS IN p-n JUNCTIONSApplied Physics Letters, 1969
- Computer calculations of avalanche-induced relaxation oscillations in silicon diodesIEEE Transactions on Electron Devices, 1968
- Computer simulation of low-frequency high-efficiency oscillations in germanium IMPATT diodesIEEE Transactions on Electron Devices, 1968
- High-efficiency oscillations in germanium avalanche diodes below the transit-time frequencyProceedings of the IEEE, 1968
- High-power, high-efficiency silicon avalanche diodes at ultra high frequenciesProceedings of the IEEE, 1967
- Improved performance of IMPATT diodes fabricated from GeProceedings of the IEEE, 1967
- Circuit for testing high-efficiency IMPATT diodesProceedings of the IEEE, 1967