Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy
- 31 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (27) , 4524-4526
- https://doi.org/10.1063/1.1429290
Abstract
Beryllium incorporation was studied for both Ga-polarity and N-polarity GaN using a series of Be step-doped epitaxial layers. Dopant concentration profiles indicated that surface polarity-related incorporation differences are not pronounced for Be. Significant surface accumulation of Be occurs during growth with surface accumulations approaching a monolayer for heavier doping levels. Transmission electron microscopy studies indicate the surface layer of Be has a significant effect on the microstructure, particularly for near monolayer coverage.Keywords
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