10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 275-278
- https://doi.org/10.1016/0167-9317(91)90228-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTsElectronics Letters, 1991
- E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs CircuitsJapanese Journal of Applied Physics, 1990
- 5.2-GHz bandwidth monolithic GaAs optoelectronic receiverIEEE Electron Device Letters, 1988
- GaAs optoelectronic integrated receiver with high-output fast-response characteristicsIEEE Electron Device Letters, 1987