Lattice-constant-adaptable crystallographics
- 1 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (4) , 1014-1034
- https://doi.org/10.1016/0022-0248(90)90871-h
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological EvaluationsJapanese Journal of Applied Physics, 1989
- Ordering of oxide precipitates in oxygen implanted siliconApplied Physics Letters, 1986
- Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor depositionJournal of Applied Physics, 1986
- Lattice images of defect-free silicon on sapphire prepared by ion implantationApplied Physics Letters, 1985
- Electron diffraction observation of epitaxial silicon grown on a CaF2/Si(100) structureApplied Physics Letters, 1985
- Lattice match: An application to heteroepitaxyJournal of Applied Physics, 1984
- Crystalline correlation of epitaxial Si films with underlying spinel films in Si/(MgO Al2O3) spinel/Si structureApplied Physics Letters, 1983
- Vapor Phase Epitaxial Growth of MgO · Al2 O 3Journal of the Electrochemical Society, 1982
- Growth of thin silicon films on sapphire and spinel by molecular beam epitaxyApplied Physics Letters, 1980
- Heteroepitaxial Silicon Growth Using SiH4 in Helium‐Hydrogen AtmospheresJournal of the Electrochemical Society, 1979