Damage production in GaAs by H+ irradiation
- 1 September 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5039-5042
- https://doi.org/10.1063/1.332774
Abstract
Rutherford backscattering and proton induced x-ray emission in combination with channeling have been used to study damage production in GaAs by proton irradiation. The average cross section for displacement of Ga and As atoms has been determined and found to agree well with the cross section calculated from the elastic displacement theory of Kinchin and Pease. In addition, we have demonstrated that about 6% more Ga atoms are displaced than As atoms.This publication has 13 references indexed in Scilit:
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