Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
- 1 August 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (8) , 1405-1410
- https://doi.org/10.1016/s0038-1101(00)00100-3
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Anomalous B penetration through ultrathin gate oxides during rapid thermal annealingIEEE Electron Device Letters, 1999
- A new soft breakdown model for thin thermal SiO/sub 2/ films under constant current stressIEEE Transactions on Electron Devices, 1999
- Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductorsApplied Physics Letters, 1998
- Role of rapid photothermal processing in process integrationIEEE Transactions on Electron Devices, 1998
- Switching behavior of the soft breakdown conduction characteristic in ultra-thin (<5 nm) oxide MOS capacitorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1998
- Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanismApplied Physics Letters, 1997
- Partial breakdown of the tunnel oxide in floating gate devicesSolid-State Electronics, 1997
- Soft breakdown of ultra-thin gate oxide layersIEEE Transactions on Electron Devices, 1996
- ‘‘Turn-around’’ effects of stress-induced leakage current of ultrathin N2O-annealed oxidesApplied Physics Letters, 1995
- Comparative study of dielectric formation by furnace and rapid isothermal processingJournal of Vacuum Science & Technology A, 1989