Channeling and nuclear reaction analysis of shallow B- and BF2- implanted Si
- 1 November 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4424-4429
- https://doi.org/10.1063/1.341265
Abstract
Ion channeling and nuclear reaction analysis (NRA) have been used to study rapid thermal annealing (RTA) of 10‐keV B‐ and 45‐keV BF2‐implanted, crystalline, and preamorphized Si. Samples were capped with SiO2 and annealed in a nitrogen atmosphere with an AG Associates 210T Heatpulse system. Damage depth distributions were determined with He+ ion channeling. Extensive disorder was observed near the B projected range following a 1050 °C/20‐s RTA cycle of B‐implanted crystalline Si. For the same annealing conditions, much less residual damage was apparent for B‐implanted preamorphized Si. No disorder was observed in the near‐surface region (2‐implanted, crystalline, and preamorphized Si. Post‐anneal damage at the original amorphous/crystalline interface was greater for BF2‐implanted crystalline Si compared to BF2‐implanted preamorphized Si. The relative retained B and F doses were determined with NRA using the 11B(p,α)8Be* and 19F(p,α0)16O reactions, respectively. A significant loss of B was observed following RTA of BF2‐implanted preamorphized Si. No loss of B was apparent for all other annealed samples. A loss of F was observed for all annealed samples. For identical annealing conditions, the relative retained F dose of BF2‐implanted preamorphized Si was less than that of BF2‐implanted crystalline Si.This publication has 30 references indexed in Scilit:
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