Comparison of low-pressure and plasma-enhanced chemical vapor deposited tungsten thin films
- 4 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14) , 1133-1135
- https://doi.org/10.1063/1.99184
Abstract
Tungsten thin films deposited by low-pressure and plasma-enhanced chemical vapor deposition are characterized to detail the effect of plasma-surface interactions on nucleation and growth. Transition from α- to β-W is observed as the H2/WF6 flow ratio is decreased from 10/1 to 1/1 in plasma-enhanced deposition; transition from α-W to amorphous W is observed under the same conditions in low-pressure chemical vapor deposition. The temperature coefficient of resistivity varies from 4.9 to 2.0 ppthou/K as the plasma-deposited films switch from α to β phase; the temperature coefficient of resistivity varies from 3.2 to −0.5 ppthou/K as the low-pressure chemically vapor deposited films become amorphous. The increased crystallinity and metastable phase formation in plasma environments are attributable to higher effective surface temperature resulting in enhanced surface mobility and grain growth.Keywords
This publication has 19 references indexed in Scilit:
- Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI ApplicationsJournal of the Electrochemical Society, 1987
- Structure of LPCVD Tungsten Films for IC ApplicationsJournal of the Electrochemical Society, 1986
- The Kinetics of LPCVD Tungsten Deposition in a Single Wafer ReactorJournal of the Electrochemical Society, 1986
- Selective LPCVD Tungsten for Contact Barrier ApplicationsJournal of the Electrochemical Society, 1986
- Kinetics and Mechanism of Selective Tungsten Deposition by LPCVDJournal of the Electrochemical Society, 1985
- Resistivity, grain size, and impurity effects in chemically vapor-deposited tungsten filmsJournal of Applied Physics, 1985
- Structure of Selective Low Pressure Chemically Vapor‐Deposited Films of TungstenJournal of the Electrochemical Society, 1985
- Plasma-enhanced chemical vapor deposition of β-tungsten, a metastable phaseApplied Physics Letters, 1984
- Selective Low Pressure Chemical Vapor Deposition of TungstenJournal of the Electrochemical Society, 1984
- Plasma-enhanced chemical vapor deposition of tungsten filmsApplied Physics Letters, 1982