A 128 Mb early prototype for gigascale single-electron memories

Abstract
A 128Mb single-electron memory targets minimum-bit-cost technology. The cell has a double stacked structure, in which two cells are integrated in an ideal contact area, 4F/sup 2/. The cell-to-cell characteristics variations, the main difficulty in large scale integration, are compensated with the dummy-cell-referenced verified read/write.

This publication has 6 references indexed in Scilit: