Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
- 15 January 2001
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (2) , 1070-1074
- https://doi.org/10.1063/1.1327288
Abstract
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the deep level band (2.0–3.0 eV). Power resolved measurements indicate that the 3.424 eV emission is a donor–acceptor pair transition. In the deep level region peaks are observed in all spectra at 2.3 and 2.6 eV. This suggests that the 2.3 and 2.6 eV peaks are related and a model is proposed to explain this luminescence.This publication has 19 references indexed in Scilit:
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