Low-threshold high-efficiency high-yield impurity-induced layer disordering laser by self-aligned Si-Zn diffusion
- 10 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (24) , 2534-2536
- https://doi.org/10.1063/1.103847
Abstract
Stripe geometry lasers defined by impurity-induced layer disordering (IILD) have been fabricated utilizing a novel technology of self-aligned Si-Zn diffusion from which both optical and electrical confinements are obtained simultaneously. The fabrication process is considerably simpler than that for the conventional IILD lasers and the parasitic p-n junction area in the laser structures is minimized. Typical lasers with threshold current Ith=5.2 mA and differential quantum efficiency ηd=81% at room-temperature continuous operation as well as highly uniform yield ≳80% have been obtained.Keywords
This publication has 10 references indexed in Scilit:
- Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integrationApplied Physics Letters, 1990
- Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1−yAs-GaAs-InxGa1−xAs quantum well lasers (λ∼910 nm)Applied Physics Letters, 1989
- Self-aligned Si-Zn diffusion into GaAs and AlGaAsJournal of Applied Physics, 1988
- Digital decoding of in-line holograms for imaging fractal aggregatesElectronics Letters, 1986
- Submilliampere lasing of Zn-diffused mesa buried-hetero Al
x
Ga
1-
x
As/GaAs multi-quantum-well lasers at 77 KElectronics Letters, 1986
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasersJournal of Applied Physics, 1985
- Low threshold planar buried heterostructure lasers fabricated by impurity-induced disorderingApplied Physics Letters, 1985
- Allpass filters using a current-controlled current sourceElectronics Letters, 1985
- Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasersElectronics Letters, 1985
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973