Effect of interfacial stress at the Si/SiO2, interface on the diffusion of Ga in Si through SiO2
- 16 April 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (2) , 485-491
- https://doi.org/10.1002/pssa.2210640210
Abstract
No abstract availableKeywords
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- A Physical and Mathematical Approach to Mass Transport in Capsule Diffusion ProcessesJournal of the Electrochemical Society, 1973
- The Effect of the Oxide Layer on the Diffusion of Ga in SiJapanese Journal of Applied Physics, 1972
- Dopant Diffusion in Silicon. III. AcceptorsPhysical Review B, 1971
- Diffusion of gallium through a silicon dioxide layerJournal of Physics and Chemistry of Solids, 1964