Diffusion of Ga into Si through SiO2
- 16 April 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 46 (2) , K151-K155
- https://doi.org/10.1002/pssa.2210460258
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Diffusion of Gallium Through Silicon Dioxide Films into SiliconJournal of the Electrochemical Society, 1974
- Compatibility of Oxide Passivation and Planar Junctions with Al, Ga, and P DiffusionsJournal of the Electrochemical Society, 1974
- The Effect of the Oxide Layer on the Diffusion of Ga in SiJapanese Journal of Applied Physics, 1972
- Sheet Resistivity Measurements on Rectangular Surfaces-General Solution for Four Point Probe Conversion FactorsBell System Technical Journal, 1967
- Diffusion of gallium through a silicon dioxide layerJournal of Physics and Chemistry of Solids, 1964
- Measurement of the Depth of Diffused Layers in Silicon by the Grooving MethodJournal of the Electrochemical Society, 1962
- Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium ArsenideJournal of the Electrochemical Society, 1962
- Vapor Pressure of Gallium, Stability of Gallium Suboxide Vapor, and Equilibria of Some Reactions Producing Gallium Suboxide VaporJournal of the Electrochemical Society, 1962
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Chemical Etching of SiliconJournal of the Electrochemical Society, 1959