Lattice defect in selective epitaxial silicon and laterally overgrown regions on SiO2
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (3) , 264-276
- https://doi.org/10.1016/0022-0248(89)90141-3
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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