Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
- 1 February 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (2) , 74-76
- https://doi.org/10.1109/55.553049
Abstract
We present a scaling theory for fully-depleted, cylindrical MOSFET's. This theory was derived from the cylindrical form of Poisson's equation by assuming a parabolic potential in the radial direction. Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula. By employing the scaling theory a comparison with double-gate (DG) MOSFET's was carried out illustrating an improvement of up to 40% in the minimum effective channel length for the cylindrical device.Keywords
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