Absolute Measurement of Lattice Spacing d(220) in Floating Zone Silicon Crystal
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9R)
- https://doi.org/10.1143/jjap.34.5065
Abstract
The lattice spacing d 220 of a silicon crystal of National Research Laboratory of Metrology has been measured with a new combined X-ray and optical interferometer, with relative uncertainty of 0.16 ppm. This value is in good agreement with other reported values, whereas the ratio of molar mass M to density ρ measured for this crystal shows discrepancy of around 3 ppm from previously reported ratios. It seems that the conventional route to determining the Avogadro constant from M, ρ and d 220 will require a new characterization technique to estimate the number of silicon atoms in a unit cell volume.Keywords
This publication has 16 references indexed in Scilit:
- A new determination of N/sub A/IEEE Transactions on Instrumentation and Measurement, 1995
- A more accurate value for the Avogadro constantIEEE Transactions on Instrumentation and Measurement, 1995
- Noise reduction in an optical interferometer for picometer measurementsIEEE Transactions on Instrumentation and Measurement, 1995
- Measurement of the silicon (220) lattice spacingPhysical Review Letters, 1994
- Silicon lattice measurement with an improved X-ray/optical interferometerIEEE Transactions on Instrumentation and Measurement, 1993
- A determination of the Avogadro ConstantZeitschrift für Physik B Condensed Matter, 1992
- Lattice distortions induced by carbon in siliconPhilosophical Magazine A, 1988
- Absolute Measurement of the (220) Lattice Plane Spacing in a Silicon CrystalPhysical Review Letters, 1981
- A simple Bragg-spacing comparatorActa Crystallographica Section A, 1978
- Principles and design of Laue-case X-Ray interferometersThe European Physical Journal A, 1965