C−V analysis of a partially depleted semiconducting channel
- 1 February 1975
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (3) , 82-84
- https://doi.org/10.1063/1.88088
Abstract
C−V analysis applied to a depletion layer bordering a semiconducting channel does not provide the true impurity distribution if the space−charge region penetrates to another depletion layer at the other side of the channel, i.e., if the channel is partially depleted. Cases in point are an epitaxial semiconducting channel on a semi−insulating chromium−doped gallium arsenide substrate; an n−channel on a p−substrate; and a heterojunction of a semiconducting epitaxial layer on an insulating substrate with interface states causing depletion.Keywords
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