The majority carrier profile in thin epitaxial layers of GaAs from Schottky barrier (C.V.) characteristics

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Abstract
Experimental results are presented which show that the effect of space charge at the epitaxial layer-substrate boundary cannot be ignored when measuring the impurity atom concentration in thin epitaxial layers by the Schottky barrier differential capacitance-voltage method. For n-type GaAs layers prepared on semi-insulating substrates it is found that the presence of space charge can be used to explain a large drop in measured impurity concentration that occurs near the substrate; the impurity atom concentration in the epitaxial layers appearing to be reasonably uniform throughout their thickness.