CBE grown 1.5 μm GaInAsP/InP Surface Emitting Lasers

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. j75 c ii

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

GaInAsP/InP surface emitting lasers grown by chemical beam epitaxy
Electronics Letters, 1992
Flat surface circular buried heterostructure surface emitting laser with highly reflective Si/SiO ₂ mirrors
Electronics Letters, 1991
GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
Japanese Journal of Applied Physics, 1990
InGaAsP(1.3 μm)/InP vertical-cavity surface-emitting laser grown by metalorganic vapor phase epitaxy
Applied Physics Letters, 1990
From chemical vapor epitaxy to chemical beam epitaxy
Journal of Crystal Growth, 1989