Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterning
- 17 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (7) , 810-812
- https://doi.org/10.1063/1.107752
Abstract
Strain relaxation in stripe-shaped GaAs layers on Si(100) substrates by post-growth patterning has been investigated by photoluminescence (PL) measurements. PL spectrum for the GaAs stripes along [001] showed peaks positioned at shorter wavelength than those for stripes along [011] and [01̄1]. The stripe-orientation dependence was regarded as the crystallographic anisotropy of strain relaxation in the stripe-shaped GaAs layers. The PL results, therefore, showed that the stripes along [001] were superior to those along [011] and [01̄1] for reducing residual strain in the GaAs layers.Keywords
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