The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantationApplied Physics Letters, 1990
- Influence of H on the recrystallization of amorphous Si layersNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Hydrogen Diffusion in Undoped a-Si:HMRS Proceedings, 1987
- Determination of the hydrogen diffusion coefficient in hydrogenated amorphous silicon from hydrogen effusion experimentsJournal of Applied Physics, 1982
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978