Wide optical gap, undoped, photoconductive a-SixN1-x:H Prepared by D.C. Sputtering
- 31 October 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 48 (2) , 117-119
- https://doi.org/10.1016/0038-1098(83)90939-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cellsSolar Energy Materials, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon filmsSolid State Communications, 1981
- a-SiC:H/a-Si:H heterojunction solar cell having more than 7.1% conversion efficiencyApplied Physics Letters, 1981
- Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputteringPhilosophical Magazine Part B, 1978