In situ infrared study of chemical state of Si surface in etching solution
- 26 September 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (13) , 1692-1694
- https://doi.org/10.1063/1.112888
Abstract
We have ‘‘in situ’’ investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen‐associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.Keywords
This publication has 16 references indexed in Scilit:
- The Evolution of Silicon Wafer Cleaning TechnologyJournal of the Electrochemical Society, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy resultsJournal of Applied Physics, 1986
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Formation of SiH bonds on the surface of microcrystalline silicon covered with SiOx by HF treatmentSolid State Communications, 1984
- Oxide Growth on Etched Silicon in Air at Room TemperatureJournal of the Electrochemical Society, 1975
- Effects of Certain Chemical Treatments and Ambient Atmospheres on Surface Properties of SiliconJournal of the Electrochemical Society, 1958