Gradual surface transitions on semiconductors induced by multiple picosecond laser pulses
- 1 January 1983
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 93 (3) , 155-157
- https://doi.org/10.1016/0375-9601(83)90081-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Surface topography of laser annealed siliconSolid State Communications, 1982
- Surface ripples on silicon and gallium arsenide under picosecond laser illuminationApplied Physics Letters, 1982
- Picosecond laser pulse irradiation of crystalline siliconApplied Physics Letters, 1982
- Space-time resolved reflectivity measurements of picosecond laser-pulse induced phase transitions in (111) silicon surface layersApplied Physics A, 1982
- Observations of the morphology of laser-induced damage in copper mirrorsApplied Physics Letters, 1982
- Periodic surface ripples in laser-treated aluminum and their use to determine absorbed powerJournal of Applied Physics, 1981
- Influence of substrate temperature in laser annealing of arsenic-implanted siliconJournal of Applied Physics, 1981
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Temperature dependence of absorptance in laser damage of metallic mirrors: I MeltingJournal of the Optical Society of America, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979