Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition

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Abstract
The surface structure of Si epitaxial film growth achieved by atmospheric chemical vapor deposition on Si(100) with a misorientation is studied by angle-resolved light scattering (ARLS) and atomic force microscopy (AFM). The Si epitaxial surface has a periodic structure consisting of terraces and atomic-steps. The terrace length depends on the substrate misorientation. The step height is independent of the substrate misorientation, and is about 0.3 nm, which corresponds to the double-layer step. The periodic structure is formed during the atmospheric growth process.