Fundamental optical properties of heavily-boron-doped silicon
- 15 December 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (18) , 9563-9568
- https://doi.org/10.1103/physrevb.36.9563
Abstract
Infrared-reflectivity data for B-ion-implanted and laser-annealed Si crystals are reported. In particular, the free-carrier response is analyzed by using the Drude relationships; new information both on the effective mass and scattering time is obtained in the presence of controlled amounts of disorder and a variable density of free holes. The free-carrier concentration is measured by means of the analysis of the x-ray intensity profiles obtained by double-crystal diffraction.Keywords
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