Infrared reflectivity and transmissivity of boron-implanted, laser-annealed silicon
- 1 October 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (10) , 5245-5249
- https://doi.org/10.1063/1.327476
Abstract
Analysis of the infrared reflectance and transmittance of boron‐implanted, laser‐annealed silicon shows that the Drude theory of free hole scattering provides a good description of the optical properties of these materials up to the highest doping levels obtainable. It was found that (1) the relaxation time (∼7×10−15 s) was independent of the implant dose, and (2) the boron concentration affecting the optical properties varies essentially linearly with implant dose.This publication has 10 references indexed in Scilit:
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