Nitrogen doping into GaAs1−xPx using ionized beam in molecular beam epitaxy

This publication has 12 references indexed in Scilit:

• Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy
  Journal of Applied Physics, 1977
• Nitrogen trap bound states in In1−xGaxP
  Solid State Communications, 1976
• Effect of substrate temperature on composition ratio x in molecular-beam-epitaxial GaAs1−xPx
  Journal of Applied Physics, 1976
• Energy levels of nitrogen isoelectronic impurities in AlxGa1−xAs
  Applied Physics Letters, 1976
• Evidence for Radiative Recombination in $\mathrm{Ga}{\mathrm{As}}_{1-x} {\mathrm{P}}_x:\mathrm{N}$ ($0.28\lesssim x\lesssim 0.45$) Involving an Isolated Nitrogen Impurity State Associated with the ${\Gamma }_1$ Minimum
  Physical Review Letters, 1976
• Ionized Zn doping of GaAs molecular beam epitaxial films
  Applied Physics Letters, 1975
• Promotion of radiative recombination in GaAs_1—XP_xby N-ion implantation
  IEEE Transactions on Electron Devices, 1975
• Molecular beam epitaxy
  Progress in Solid State Chemistry, 1975
• Vapor phase epitaxial materials for LED applications
  Proceedings of the IEEE, 1973
• Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution
  Journal of Applied Physics, 1973