Energy levels of nitrogen isoelectronic impurities in AlxGa1−xAs
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3) , 196-197
- https://doi.org/10.1063/1.89023
Abstract
Energy levels of nitrogen isoelectronic impurities in AlxGa1−xAs doped with 1018 N cm−3 by ion implantation were determined from the photoluminescence measurements at 2 °K. Three bound states associated with nitrogen impurities are situated below the X1 conduction‐band minima and the binding energies of the excitons bound to the states decrease with increasing composition ratio x.Keywords
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