Composition-ratio dependence of formation of bound states in nitrogen-implanted AlxGa1−xAs
- 1 March 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (5) , 287-289
- https://doi.org/10.1063/1.88738
Abstract
The formation of isoelectronic bound states in AlxGa1−xAs implanted with nitrogen has been investigated by means of photoluminescence. These bound states can be observed for compositions x≳0.29. For compositions x⩽0.31 the effect of the implantation is to decrease the emission intensity.Keywords
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