Application of Auger Depth Profiling on the Al-SiO2 Interface
- 16 November 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 74 (1) , 85-90
- https://doi.org/10.1002/pssa.2210740109
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Evidence for reaction at the Al-SiO2interfaceJournal of Physics D: Applied Physics, 1981
- Au and Al interface reactions with SiO2Applied Physics Letters, 1980
- Dipole layers at the metal-SiO2 interfaceJournal of Applied Physics, 1980
- Microroughness induced on solids by ion bombardment: I. Experimental results on sputtering of aluminium by A+ (15 keV); quantification of microroughnessSurface Science, 1979
- Observations of Al2O3 and free silicon at the interface between aluminum films and SiO2Thin Solid Films, 1978
- Abstract: Chemical structure of the Al–SiO2 interfaceJournal of Vacuum Science and Technology, 1978
- Auger depth profiling of interfaces in MOS and MNOS structuresJournal of Vacuum Science and Technology, 1976
- The Reaction Between Silica and AluminumJournal of the Electrochemical Society, 1974
- Die Analyse monomolekularer FestkörperoberflÄchenschichten mit Hilfe der SekundÄrionenemissionThe European Physical Journal A, 1970