O+ implantation and annealing in n-type InAlAs
- 4 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (18) , 1278-1280
- https://doi.org/10.1063/1.97883
Abstract
The dependence of the electrical properties of oxygen‐implanted p+‐n In0.52Al0.48As diodes on annealing temperatures has been studied. Current‐voltage and capacitance‐voltage measurements reveal that a semi‐insulating layer is created by oxygen implantation in n‐InAlAs which is found to be stable up to at least 720 °C. The presence of this semi‐insulating layer significantly reduces the junction capacitance of the diode and the diode current at high bias levels.Keywords
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