High-power, single-mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization
- 1 August 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3) , 225-228
- https://doi.org/10.1063/1.93475
Abstract
The high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-insulating InP substrate has been investigated. Peak power of over 250 mW/facet for pulsed operation and 11 mW/facet cw are achieved with stable fundamental mode operation and narrow beam width. It is suggested that the single-mode operation is caused by a gain stabilizing mechanism related to the transverse junction injection profiles.Keywords
This publication has 7 references indexed in Scilit:
- Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InPApplied Physics Letters, 1982
- Groove GaInAsP laser on semi-insulating InPElectronics Letters, 1981
- High power output InGaAsP/InP buried heterostructure lasersElectronics Letters, 1981
- Control of mode behavior in semiconductor lasersIEEE Journal of Quantum Electronics, 1981
- Transverse-modal behavior of a transverse junction stripe laser excited by a short electrical pulseJournal of Applied Physics, 1981
- High-output power InGaAsP (λ=1.3 μm) strip-buried heterostructure lasersApplied Physics Letters, 1980
- Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currentsElectronics Letters, 1979