Optical and crystallographic properties of high perfection InP grown on Si(111)
- 1 February 1994
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (2) , 135-139
- https://doi.org/10.1007/bf02655259
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- InP on patterned Si(001): defect reduction by application of the necking mechanismJournal of Crystal Growth, 1992
- Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrateApplied Physics Letters, 1992
- Antiphase-domain-free InP on Si(001): optimization of MOCVD processJournal of Crystal Growth, 1991
- Initial growth of Bi films on a Si(111) substrate: Two phases of √3 × √3 low-energy-electron-diffraction pattern and their geometric structuresPhysical Review B, 1991
- Geometric and electronic structure of Sb on Si(111) by scanning tunneling microscopyPhysical Review B, 1991
- Low-temperature metalorganic chemical vapor deposition of InP on Si(001)Applied Physics Letters, 1991
- Adsorption of phosphorus on Si(111): Structure and chemical reactivityPhysical Review B, 1991
- Heteroepitaxial growth of InP on a GaAs substrate by low-pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Molecular beam epitaxial growth of GaAs on Si(211)Journal of Applied Physics, 1985
- The roughness of cleaved semiconductor surfacesSurface Science, 1973