An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (4) , 567-574
- https://doi.org/10.1109/jssc.1987.1052774
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- GaAs switched-capacitor circuits for video signal processingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Comparison of amplifier gain enhancement techniques for GaAs MESFET analogue integrated circuitsElectronics Letters, 1986
- A capacitance model for GaAs MESFET'sIEEE Transactions on Electron Devices, 1985
- Compact DC model of GaAs FETs for large-signal computer calculationIEEE Journal of Solid-State Circuits, 1983
- A MESFET Model for Use in the Design of GaAs Integrated CircuitsIEEE Transactions on Microwave Theory and Techniques, 1980
- Microwave Field-Effect Transistors - 1976IEEE Transactions on Microwave Theory and Techniques, 1976
- The Potential Due to a Charged Metallic Strip on a Semiconductor SurfaceBell System Technical Journal, 1970
- Modeling and simulation of insulated-gate field-effect transistor switching circuitsIEEE Journal of Solid-State Circuits, 1968
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952