Electrical characterization of SOS n-MOSFETs at cryogenic temperatures
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Form only given. The behavior of n-channel MOSFETs fabricated on thin film SOS structures is discussed. The devices exhibit stable electrical characteristics at temperatures down to 5 K, thus suggesting the compatibility of these devices for CMOS circuits. The quasistatic C-V curves exhibit additional peaks at lower temperatures that are possibly due to pipe-diffusion effects prominent in SOS structures. The noise characteristics appear to improve near the kink region, which could be useful in obtaining higher circuit speeds. Thus SOS technology shows significant promise for future high-density CMOS circuits at low temperature Author(s) Wang, J. Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA Chang, J. ; Raman, V.K. ; Vasudev, P.K. ; Viswanathan, C.R.Keywords
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