In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 467-474
- https://doi.org/10.1016/0022-0248(94)00559-1
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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