p-type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy
- 27 May 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2378-2380
- https://doi.org/10.1063/1.104876
Abstract
Diethylzinc (DEZn) was used as a p‐type dopant source during metalorganic molecular beam epitaxy of Ga0.47In0.53As and InP. The incorporation efficiency of the Zn was less than 10−3. However, doping levels from p=1×1017 to 3×1019 cm−3 were obtained at growth temperatures of 485–510 °C. Measurements with secondary‐ion mass spectrometry indicated negligible diffusion of Zn in the Ga0.47In0.53As at these doping levels and growth temperatures. The DEZn was used to dope the p‐type InP cladding layer of broad‐area separate confinement multiquantum well (SCH‐MQW) lasers. Threshold current densities as low as 600 A/cm2 were achieved in nonoptimized structures.Keywords
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