Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 9 (10) , 413-415
- https://doi.org/10.1109/75.798033
Abstract
The performance of a cryogenically cooled -band amplifier for the geodetic VLBI -band (8.1-9.0 GHz) is pre- sented. The amplifier incorporates hydrogen passivated InP de- vices with 0.2 200 m gate. A comparison of the noise perfor- mance with selected commercially available GaAs high electron mobility transistor (HEMT) devices of similar dimensions is presented. The InP amplifier shows lower noise temperature ( = 4.8 K, = 0.07 dB) than GaAs, with very low power dissipation (2 mW per stage). This is the first report on the cryogenic noise performance of hydrogen passivated InP HEMT's in this frequency band.Keywords
This publication has 11 references indexed in Scilit:
- Cryogenic, HEMT, low-noise receivers for 1.3 to 43 GHz rangePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-frequency noise properties of selectively dry etched InP HEMT'sIEEE Transactions on Electron Devices, 1998
- Low-noise properties of dry gate recess etched InP HEMTsIEEE Electron Device Letters, 1996
- An integrated SIS mixer and HEMT IF amplifierIEEE Transactions on Microwave Theory and Techniques, 1996
- An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiverIEEE Microwave and Guided Wave Letters, 1994
- Design and implementation of a low-noise prime-focus S/X receiver system for radio astronomyProceedings of the IEEE, 1994
- A multiline method of network analyzer calibrationIEEE Transactions on Microwave Theory and Techniques, 1991
- Design and Performance of Cryogenically-Coolable Ultra Low Noise, L-Band AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989