Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- W-band and D-band low noise amplifiers using 0.1 micron pseudomorphic InAlAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlInAs/GaInAs on InP HEMT low noise MMIC amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ultra-low-noise receivers for the 1 to 120 GHz frequency rangePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- FET noise model and on-wafer measurement of noise parametersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- W-band InGaAs HEMT low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989