Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy
- 1 October 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 387 (1-3) , 213-226
- https://doi.org/10.1016/s0039-6028(97)00355-5
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopyJournal of Crystal Growth, 1996
- Mechanism for Disorder on GaAs(001)-SurfacesPhysical Review Letters, 1996
- Commensurate and Incommensurate Phases at Reconstructed (In,Ga)As(001) Surfaces: X-Ray Diffraction Evidence for a Composition Lock-inPhysical Review Letters, 1995
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal SurfaceJapanese Journal of Applied Physics, 1995
- Structures of the Ga-RichandReconstructions of the GaAs(001) SurfacePhysical Review Letters, 1995
- Surface structure transitions on InAs and GaAs (001) surfacesPhysical Review B, 1995
- In segregation at the growth front of the GaAs/In0.30Ga0.70As (100) heterojunctionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Surface-Confined Alloy Formation in Immiscible SystemsPhysical Review Letters, 1995
- Defect control during growth of highly mismatched (100) InAsGaAs-heterostructuresJournal of Crystal Growth, 1995
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) SurfacesJapanese Journal of Applied Physics, 1994