Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed
- 17 June 2005
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 80, 398-401
- https://doi.org/10.1016/j.mee.2005.04.011
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Low-voltage organic transistors with an amorphous molecular gate dielectricNature, 2004
- The metal/organic monolayer interface in molecular electronic devicesMicroelectronic Engineering, 2003
- Electron Transport in Molecular Wire JunctionsScience, 2003
- Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devicesJournal of Applied Physics, 2002
- Electronics using hybrid-molecular and mono-molecular devicesNature, 2000
- Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating filmsApplied Physics Letters, 2000
- Nano-field effect transistor with an organic self-assembled monolayer as gate insulatorApplied Physics Letters, 1998
- Electrical properties of end-group functionalised Self-Assembled MonolayersMicroelectronic Engineering, 1997
- Suppression of Charge Carrier Tunneling through Organic Self-Assembled MonolayersPhysical Review Letters, 1996
- Ultra-low conductivity through insulating self-assembled organic monolayersMicroelectronic Engineering, 1995