Vapour-deposited silicon dioxide for device applications
- 1 July 1974
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 22 (3) , 245-253
- https://doi.org/10.1016/0040-6090(74)90295-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Mesure de concentration et de mobilité des porteurs des zones diffusées dans le SiZeitschrift für angewandte Mathematik und Physik, 1972
- Absence of 1/ f noise in m.o.s. transistors operated in saturationElectronics Letters, 1971
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- 1/ f noise in gate-controlled planar silicon diodesElectronics Letters, 1968
- SURFACE-STATE RELATED l/f NOISE IN p-n JUNCTIONS AND MOS TRANSISTORSApplied Physics Letters, 1968
- Surface states and 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1967
- Measurement of the Retention of Fluoride by Silicon and Silicon Dioxide SurfacesJournal of the Electrochemical Society, 1967
- Evidence of the Surface Origin of theNoisePhysical Review Letters, 1966