Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys
- 1 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 50-51
- https://doi.org/10.1063/1.95001
Abstract
We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light-induced effect.Keywords
This publication has 12 references indexed in Scilit:
- Energy distribution of light-induced gap states in hydrogenated amorphous-silicon alloysPhysical Review B, 1984
- Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivityJournal of Non-Crystalline Solids, 1983
- On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysApplied Physics Letters, 1983
- Effects of prolonged illumination on the properties of hydrogenated amorphous siliconSolar Energy Materials, 1982
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Light-induced effects in Schottky diodes on hydrogenated amorphous siliconApplied Physics Letters, 1980
- The shape of disorderJournal of Non-Crystalline Solids, 1979
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977