Characterization of epitaxially grown films of vanadium oxides
- 1 August 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (3) , 1412-1415
- https://doi.org/10.1063/1.349550
Abstract
The growth of VO2 and V2O3thin films by reactive sputtering has been investigated. Previously reported studies of such thin films have often presented ambiguous results concerning the precise nature of the layers produced. A thorough and comprehensive characterization program including x‐ray diffraction,scanning electron microscopy, Rutherford‐backscattering spectroscopy, and electrical conductivity measurements has been undertaken to ensure that the films produced were of a true epitaxial nature.This publication has 12 references indexed in Scilit:
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